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GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type
GT60N321
High Power Switching Applications The 4th Generation
* * * *
FRD Included Between Emitter and Gollector Enhancement-Mode High Speed IGBT : tf = 0.25 s (typ.) (@IC = 60 A) FRD : trr = 0.8 s (typ.) (@di/dt = -20 A/s) VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Low Saturation Voltage
Maximum Ratings (Ta = 25C)
Characteristics Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Emitter-Collector Forward Current Collector Power Dissipation (Tc = 25C) Junction Temperature Storage Temperature Screw Torque DC 1 ms DC 1 ms symbol VCES VGES IC ICP IECF IECFP PC Tj Tstg Rating 1000 25 60 120 15 120 170 150 -55~150 0.8 W C C N*m A Unit V V A
Equivalent Circuit
Collector
Gate
Emitter
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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GT60N321
Electrical Characteristics (Ta = 25C)
Characteristic Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr 10 ton tf 15 V 0 -15 V IEC = 15 A, VGE = 0 IF = 15 A, VGE = 0, di/dt = -20 A/s 51 Test Condition VGE = 25 V, VCE = 0 VCE = 1000 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 10 A, VGE = 15 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min 3.0 Typ. 1.6 2.3 4000 0.23 0.33 0.25 Max 500 1.0 6.0 2.3 2.8 Unit nA mA V V V pF

0.40 s
600 V 0.70
Turn-off Time
toff VECF trr Rth(j-c) Rth(j-c)
2.0 2.5 0.74 4.0 V s C/W C/W
Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance
1.5 0.8
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GT60N321
IC - VCE
100 25 V Common Emitter Tc = 25C 10 V 15 V 60 VGE = 7 V 40 10
VCE - VGE (V)
Common Emitter Tc = -40C 80 6
(A)
80
VCE Collector-Emitter Voltage
20 V
8
Collector Current
IC
4 30 2 IC = 10 A 0 0 60
20
0 0 1 2 3 4 5
5
10
15
20
25
Collector-Emitter Voltage
VCE
(V)
Gate-Emitter Voltage
VGE
(V)
VCE - VGE
10 10 Common Emitter Tc = 25C 80 6
VCE - VGE (V)
Common Emitter Tc = 125C 80 6
(V)
VCE
8
VCE Collector-Emitter Voltage
8
Collector-Emitter Voltage
4 60 2 30 0 0 IC = 10 A
4 60
2 30 0 0 IC = 10 A
5
10
15
20
25
5
10
15
20
25
Gate-Emitter Voltage
VGE
(V)
Gate-Emitter Voltage
VGE
(V)
IC - VGE
100 Common Emitter VCE = 5 V 4
VCE (sat) - Tc Collector-Emitter Saturation Voltage VCE (sat) (V)
Common Emitter VGE = 15 V 3 80 60 2 30
(A) IC Collector Current
80
60
40 25 20 40 TC = 125C 0 0 2 4 6 8
1
IC = 10 A
0 -40
0
40
80
120
160
Gate-Emitter Voltage
VGE
(V)
Case Temperature
Tc
(C)
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GT60N321
(x10 V)
VCE, VGE - QG
20 Common Emitter RL = 2.5 TC = 25C VCE = 150 V 1 8 10 VCC = 600 V IC = 60 A VGG = 15 V TC = 25C
Switching Time - RG
Common Emitter
(V)
(V)
16
VCE
VGE
(s)
toff ton tr tf 100 V
Collector-Emitter Voltage
Gate-Emitter Voltage
12
4 50 V 0 0 0.1 1
50
100
150
200
250
300
350
400
10
100
1000
Gate Charge
QG
(nC)
Gate Resistance
RG
()
Switching Time - IC
10 Common Emitter VCC = 600 V RG = 51 VGG = 15 V TC = 25C 10000
C - VCE
Common Emitter Cies 1000 VGE = 0 V f = 1 MHz TC = 25C
(s)
Switching Time
1
toff
Capacitance
C
ton tf tr
(pF)
100
Coes Cres 10 1 10 100 1000 10000
0.1 0
Collector-Emitter Voltage
20 40 60 80
VCE
(V)
Collector Current
IC
(A)
Reverse Bias SOA Safe Operating Area
1000 100 300 Tj < 125C = VGE = 15 V RG = 10
(A)
(A)
DC Operation * Single 10 Non-Repetitive Pulse Tc = 25C Curves must be Derated Linearly with Increase in Temperature. 1 1 10 1 ms* 10 ms* 100 s*
50 30
Collector Current
Collector Current
IC max (Pulsed)* IC max 100 (Continuous)
IC
10 s*
IC
10 5 3
100
1000
3000
1 1
30
100
300
1000
3000
Collector- Emitter Voltage
VCE
(V)
Collector-Emitter Voltage
VCE
(V)
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GT60N321
10
3
Rth (t) - tw
100
IECF - VECF Emitter-Collector Forward Current IECF (A)
Tc = 25C Common Collector 80
Transient Thermal Resistance Rth (t) (C/W)
10
2
10
1
Diode Stage
60
10
0 IGBT Stage
10-1 10-2 10-3 10-5
40
-40 20 Tc = 125C 25 0 0.0 0.5 1.0 1.5 2.0 2.5
10-4
10-3
10-2
10-1
10
0
10
1
10
2
Pulse Width
tw
(s)
Collector-Emitter Forward Voltage VECF (V)
Irr, trr - IECF
10 2 50
Irr, trr - di/dt
1 Common Emitter IECF = 60 A Tc = 25C
Peak Reverse Recovery Current Irr (A)
Peak Reverse Recovery Current Irr (A)
9
trr
Reverse Recovery Time
8 trr Irr 7
1.2
30
0.6
0.8
20
0.4
6
0.4
10
0.2
5 0 20 40 60 80
0 100
0 0 50 100 150 200
0 250
Emitter-Collector Forward Current IECF (A)
di/dt
(A/s)
2000-04-27
Reverse Recovery Time
trr
Common Emitter di/dt = -20 A/s Tc = 25C
(s)
1.6
40
trr
0.8
(s)
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